科研论文
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2024
Integrating First-Principles-Based Non-Fourier Thermal Analysis Into Nanoscale Device Simulation
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2023
Understanding the Competitive interaction in leakage mechanisms for Effective Row Hammer Mitigation in sub-20nm DRAM
tion in leakage mechanisms for Effective Row Hammer Mitigation in sub-20nm DRAM," in IEEE Electron Device Letters, doi: 10.1109/LED.2023.3334763....
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2023
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation
anism, Key Features and Mitigation," 2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023, pp. 1-10, doi: 10.1109/IRPS48203.2023.10117677....
2024
Integrating First-Principles-Based Non-Fourier Thermal Analysis Into Nanoscale Device Simulation
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2023
Understanding the Competitive interaction in leakage mechanisms for Effective Row Hammer Mitigation in sub-20nm DRAM
J. Li, L. Zhou, S. Ye, Z. Qiao and Z. Ji, "Understanding the Competitive Interaction in leakage mechanisms for Effective Row Hammer Mitigation in sub-20nm DRAM," in IEEE Electron Device Letters, doi: 10.1109/LED.2023.3334763.
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2023
Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling
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2023
Comprehensive Study of NBTl and Off-State Reliabilty in Sub-20 nm DRAM Technology: Trapldentification, Compact Aging Model, and lmpact on Retention Degradation
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2023
Towards Reliability- &Variability-aware Design-Technology Co-optimization in Advanced Nodes: Defect Characterization, Industry-friendly Modelling and ML-assisted Prediction
Z. Ji et al., "Toward Reliability-and Variability-Aware Design-Technology Co-Optimization in Advanced Nodes: Defect Characterization, Industry-Friendly Modeling, and ML-Assisted Prediction," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2023.3330834.
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2023
Physics-Informed Learning for EPG-Based TDDB Assessment
Dinghao Chen, Wenjie Zhu, Xiaoman Yang, Pengpeng Ren, Zhigang Ji, Hai-Bao Chen, “Physics-Informed Learning for EPG-Based TDDB Assessment,” Asia South Pacific Design Automation Conference (ASP-DAC), pp.1-6, 2024.
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2023
Oxygen Vacancy Modulation with TiO2 Stack Interface Engineering for Ferroelectric Hf0.5Zr0.502 Thin Films
X. Wang et al., "Oxygen Vacancy Modulation with TiO2 Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O2 Thin Films," in IEEE Electron Device Letters, doi: 10.1109/LED.2023.3330784.
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2023
A Pragmatic Model to Predict Future Device Aging
J. Brown et al., "A Pragmatic Model to Predict Future Device Aging," in IEEE Access, vol. 11, pp. 127725-127736, 2023, doi: 10.1109/ACCESS.2023.3329077.
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2023
A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology
Y. Li et al., "A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2023.3322665.
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2023
A Simple Method for Series Resistance Extraction in Ultrascaled FinFETs Using Flicker Noise
J. Wu, P. Ren and Z. Ji, "A Simple Method for Series Resistance Extraction in Ultrascaled FinFETs Using Flicker Noise," in IEEE Transactions on Electron Devices, vol. 70, no. 11, pp. 6078-6081, Nov. 2023, doi: 10.1109/TED.2023.3319457.
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