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2026
DRAM-Compatible Deterministic B2S Conversion Using Time-Weighted Comparison and DRAM-Resident Templates
inistic B2S Conversion Using Time-Weighted Comparison and DRAM-Resident Templates,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2026....
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2026
Tail-Aware Variability Simulation for Planar CMOS under Cryogenic Condition: From Compact Modeling to SPICE Integration
riability Simulation for Planar CMOS under Cryogenic Condition: From Compact Modeling to SPICE Integration," in 2026 4th International Symposium of Electronics Design Automation (ISEDA), Singapore, 2026....
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2020
Exploring the Impact of Random Telegraph Noise-Induced Accuracy Loss on Resistive RAM-Based Deep Neural Network
oring the Impact of Random Telegraph Noise-Induced Accuracy Loss on Resistive RAM-Based Deep Neural Network,” IEEE Trans. Electron Devices, vol. 67, no. 8, pp. 3335-3340, Jun. 2020....
2026
DRAM-Compatible Deterministic B2S Conversion Using Time-Weighted Comparison and DRAM-Resident Templates
S. Xia, C. Zhang, M. Yang, H. Meng, M. Liu, and Z. Ji, “DRAM-Compatible Deterministic B2S Conversion Using Time-Weighted Comparison and DRAM-Resident Templates,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2026.
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2026
Tail-Aware Variability Simulation for Planar CMOS under Cryogenic Condition: From Compact Modeling to SPICE Integration
Y. Zhong, J. Guo, C. Zhang, X. Zhang, P. Ren, R. Wang, and Z. Ji, "Tail-Aware Variability Simulation for Planar CMOS under Cryogenic Condition: From Compact Modeling to SPICE Integration," in 2026 4th International Symposium of Electronics Design Automation (ISEDA), Singapore, 2026.
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2026
Toward Aging-Aware Silicon Lifecycle Management in Advanced Technology: In-Situ Monitor Design, Deployment and AVS Architecture
H. Jin, F. Shu, H. Qiu, Y. Zhang, P. Ren, Z. Yu, and Z. Ji, "Toward Aging-Aware Silicon Lifecycle Management in Advanced Technology: In-Situ Monitor Design, Deployment and AVS Architecture," in 2026 4th International Symposium of Electronics Design Automation (ISEDA), Singapore, 2026.
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2026
Fast Timing Analysis Framework Considering Manufacturing and In-field Operation for Silicon Lifecycle Management
Y. Zhang, H. Qiu, F. Shu, M. Jin, P. Ren, and Z. Ji, “Fast Timing Analysis Framework Considering Manufacturing and In-field Operation for Silicon Lifecycle Management,” in 2026 4th International Symposium of Electronics Design Automation (ISEDA), Singapore, 2026.
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2026
Tackling MoE communication bottleneck with dynamic in-switch computing on multi-GPUs
Q. Zhang, C. Zhang, Z. Zhou, H. Wang, Z. Zhou, Z. Tu, G. Sun, Z. Xie, Y. Diao, Z. Ji, J. Leng, G. He, and M. Guo, “Tackling MoE communication bottleneck with dynamic in-switch computing on multi-GPUs,” in Proceedings of the 53rd Annual International Symposium on Computer Architecture (ISCA), Raleigh, USA, 2026.
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2026
MoE-Hub: Taming Software Complexity for Seamless MoE Overlap with Hardware-Accelerated Communication on Multi-GPU Systems
Z. Zhou, C. Zhang, S. Zhang, Q. Zhang, H. Wang, Z. Zhou, Z. Tu, G. Sun, Y. Diao, Z. Ji, J. Leng, G. He, and M. Guo, “MoE-Hub: Taming software complexity for seamless MoE overlap with hardware-accelerated communication on multi-GPU systems,” in Proceedings of the 53rd Annual International Symposium on Computer Architecture (ISCA), Raleigh, USA, 2026.
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2026
FACT: A new framework for aging-aware circuits critical path prediction with enhanced adaptability
M. Jin, Y. Wei, Y. Sun, F. Shu, H. Chen, P. Ren, R. Wang, and Z. Ji, “FACT: A new framework for aging-aware circuits critical path prediction with enhanced adaptability,” IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., 2026.
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2026
Recent advances in contact resistivity at metal-semiconductor interfaces for post-Moore nanoscale devices
M. Wu, M. Yuan, H. Lin, H. Dong, F. Lu, W. Wang, S. Ye, and Z. Ji, “Recent advances in contact resistivity at metal-semiconductor interfaces for post-Moore nanoscale devices,” APL Electron. Devices, vol. 2, no. 1, pp. 011501, Feb. 2026.
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The reduced contact resistivity through interface doping in CoSi₂/Si system: A first-principles study
M. Yuan, M. Wu, H. Lin, F. Lu, W. Wang, S. Ye, and Z. Ji, “The reduced contact resistivity through interface doping in CoSi₂/Si system: A first-principles study,” in 2026 IEEE Electron Devices Technology & Manufacturing Conf. (EDTM), Penang, Malaysia, 2026.
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2026
Comprehensive study on interfacial layer and oxygen vacancy suppression via scavenging electrodes in ferroelectric MFS capacitors
B. Cui, J. Liu, C. Zhang, M. Wu, S. Ye, X. Wang, Y. Wu, M. Yuan, Y. Wen, H. Lu, D. Zhang, R. Wang, and Z. Ji, “Comprehensive study on interfacial layer and oxygen vacancy suppression via scavenging electrodes in ferroelectric MFS capacitors,” in Proc. 2026 IEEE Electron Devices Technology & Manufacturing Conf. (EDTM), Penang, Malaysia, 2026.
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