科研论文
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2025
Towards Accurate Machine-learning-assisted Aging Prediction with Probabilistic Strategy
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New
2025
New Approach for Aging Assessment of Digital Circuits Featuring Systematic Signal Probability Tracing
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2022
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd> Vg Condition for sub-20nm DRAM Technologies
ETs under Vd>Vg Condition for sub-20nm DRAM Technologies," 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2022, pp. 7B.1-1-7B.1-7, doi: 10.1109/IRPS48227.2022.9764561....
2025
New Approach for Aging Assessment of Digital Circuits Featuring Systematic Signal Probability Tracing
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2025
Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study
T. Zhang, M. Wu, M. Yuan, Y. Wen, Y. Hu, X. Wang, B. Cui, J. Liu, Y. Wu, H. Dong, F. Lu, W. Wang, P. Ren, S. Ye, H. Lu, R. Wang, Z. Ji, R. Huang, "Charge balance effect on the phase stability and reliability in doped HfO2-ZrO2 superlattice films for further DRAM capacitors: A first-principles study," Appl. Phys. Lett., vol. 126, no. 10, pp. 102901, Mar. 2025.
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2025
Wide range work function modulation of TiN for complementary field effect transistor: A first-principles study
M. Yuan, M. Wu, Y. Wen, X. Wang, B. Cui, J. Liu, Y. Wu, H. Dong, F. Lu, W. Wang, P. Ren, S. Ye, H. Lu, R. Wang, Z. Ji, R. Huang, "Wide range work function modulation of TiN for complementary field effect transistor: A first-principles study," APL Electronic Devices, vol. 1, no.1, pp. 016107, Mar. 2025.
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2025
Bit Line Hammering in Si-Based VCT DRAM: A New Security Challenge and Its Mitigation
Y. Liu, D. Wang, P. Ren, R. Wang, Z. Ji and R. Huang, "Bit Line Hammering in Si-Based VCT DRAM: A New Security Challenge and Its Mitigation," IEEE Electron Device Letters, pp. 1-1, 2025.
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2025
On the Interaction between Hot Carrier Degradation (HCD) and Electrical-induced Breakdown (EiB) in Advanced FinFET Nodes
Y. Xue, Y. Hu, M. Wu, C. Zhang, D. Wang, J. Zhang, P. Ren, X. Wu, R. Wang, Z. Ji, R. Huang, "On the Interaction Between Hot Carrier Degradation (HCD) and Electrical-Induced Breakdown (EiB) in Advanced FinFET Nodes," IEEE Trans. on Electron Devices, pp. 1-8, 2025.
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2025
Understanding of GlDL-State Degradation (GSD): The Reliability Challenge in pFET Standby Mode for Sub-20-nm DRAM Technology
D. Wang, Y. Liu, L. Zhou, Y. Xue, P. Ren, R. Wang, Z. Ji, and R. Huang, “Understanding of GIDL-State Degradation (GSD): The Reliability Challenge in pFET Standby Mode for Sub-20-nm DRAM Technology,” IEEE Electron Device Lett., pp. 1-1, 2025.
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