科研论文
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2025
Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study
W. Wang, P. Ren, S. Ye, H. Lu, R. Wang, Z. Ji, "Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study," Appl. Phys. Lett. vol. 126, pp. 131601, Mar. 2025....
New
2025
DATIS: DRAM Architecture and Technology Integrated Simulation
ecture and Technology Integrated Simulation,” in 2025 3rd International Symposium of Electronics Design Automation (ISEDA), Hong Kong, China, 2025....
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2022
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd> Vg Condition for sub-20nm DRAM Technologies
ETs under Vd>Vg Condition for sub-20nm DRAM Technologies," 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2022, pp. 7B.1-1-7B.1-7, doi: 10.1109/IRPS48227.2022.9764561....
2024
Fast Aging-Aware Timing Analysis Framework With Temporal–Spatial Graph Neural Network
J. Ye, P. Ren, Y. Xue, H. Fang and Z. Ji, “Fast Aging-Aware Timing Analysis Framework With Temporal–Spatial Graph Neural Network,” IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., vol. 43, no. 6, pp. 1862-1871, Jun. 2024.
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2024
Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films
X. Wang, M. Wu, T. Zhang, B. Cui, Y.-C. Li, J. Liu, Y. Wu, Y. Wen, S. Ye, P. Ren, D. W. Zhang, H.-L. Lu, R. Wang, Z. Ji, and R. Huang, “Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films,” Appl. Phys. Lett., vol. 124, no. 23, Jun.2024.
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2024
DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits
H. Chen, X. Zhang, W. Zhu, J. Chen, P. Ren, Z. Ji, J. Liu, R. Wang, R. Huang, “DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits,” IEEE Trans. Circuits Syst. I: Regul. Pap., vol. 71, no. 5, pp. 2410-2423, May 2024.
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2024
New Insights Into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology
P. Ren, J. Wu, C. Zhang, Y. Xue, S. Yang, S. Wang, R. Wang, Z. Ji, R. Huang, “New Insights Into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology,” IEEE Trans. Electron Devices, vol. 71, no. 5, pp. 3377-3382, May 2024.
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2024
A Simplified Method for RTN Assessment and Novel Understanding on AC RTN
C. Zhang, Y. Xiao, Y. Xue, D. Wang, P. Ren and Z. Ji, "A Simplified Method for RTN Assessment and Novel Understanding on AC RTN," in 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), HsinChu, Taiwan, 2024, pp. 1-2.
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2024
A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation
Y. Xiao, C. Zhang, D. Wang, Y. Xue, P. Ren and Z. Ji, "A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation," in 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, TX, USA, 2024, pp. P75.TX-1-P75.TX-4.
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2024
Investigation of Positive Bias Temperature Instability in advanced FinFET nodes
Y. Xue, M. Yuan, Y. Li, D. Wang, M. Wu, P. Ren, L. Zhang, R. Wang, Z. Ji, and R. Huang, “Investigation of Positive Bias Temperature Instability in advanced FinFET nodes,” in 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, TX, USA, 2024, pp. 1-5.
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2024
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI) : from Characterization to Physical Origin Identification
D. Wang, Y. Xue, Y. Liu, P. Ren, Z. Sun, Z. Wang, Y. Liu, Z. Cheng, H. Yang, X. Liu, B. Wu, K. Cao, R. Wang, Z. Ji, and R. Huang, “Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification," in 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, TX, USA, 2024, pp. 9B.2-1-9B.2-7.
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2024
Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs
Z. Sun, Y. Xue, H. Lu, P. Ren, Z. Wang, Z. Ji, R. Wang, and R. Huang, “Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs,” in 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, TX, USA, 2024, pp. P72.TX-1-P72.TX-5.
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2024
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM
L. Zhou, J. Li, P. Ren, S. Ye, D. Wang, Z. Qiao, and Z. Ji, “Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM,” in 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, TX, USA, 2024, pp. 1-6.
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