科研论文
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2025
Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study
W. Wang, P. Ren, S. Ye, H. Lu, R. Wang, Z. Ji, "Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study," Appl. Phys. Lett. vol. 126, pp. 131601, Mar. 2025....
New
2025
DATIS: DRAM Architecture and Technology Integrated Simulation
ecture and Technology Integrated Simulation,” in 2025 3rd International Symposium of Electronics Design Automation (ISEDA), Hong Kong, China, 2025....
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2022
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd> Vg Condition for sub-20nm DRAM Technologies
ETs under Vd>Vg Condition for sub-20nm DRAM Technologies," 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 2022, pp. 7B.1-1-7B.1-7, doi: 10.1109/IRPS48227.2022.9764561....
2023
A strong physical unclonable function with machine learning immunity for Internet of Things application
P. Ren, Y. Xue, L. Jing, L. Zhang, R. Wang, Z. Ji, “A strong physical unclonable function with machine learning immunity for Internet of Things application,” Sci. China Inf. Sci., vol. 67, no. 1, pp. 112404, Dec. 2023.
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2023
Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling
J. Wu, P. Ren*, C. Zhang, Y. Xiao, Y. Xue, Y. Li, X. Wang, L. Zhang, J. Liu, J. Zhang, R. Wang, Z. Ji*, and R. Huang, "Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling," in 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1-4.
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2023
Comprehensive Study of NBTl and Off-State Reliabilty in Sub-20 nm DRAM Technology: Trapldentification, Compact Aging Model, and lmpact on Retention Degradation
Z. Sun, P. Cai, J. Song, D. Wang, Z. Liu, L. Zhou, T. Zhu, Y. Xue, Y. Liu, Z. Wang, J. Luo, H. Deng, Y. Wang, Z. Ji, R. Wang*, and R. Huang, "Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation," in 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1-4.
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2023
New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance,(100) vs (110), and nMOS vs pMOS
Z. Wang, H.Lu, Z. Sun, C. Shen, B. Peng, W. Li, Y. Xue, D. Wang, Z. Ji, L. Zhang, Y. Liu*, X. Jiang, R. Wang, and R. Huang, "New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS," in 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1-4.
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2023
Understanding the Competitive Interaction in leakage mechanisms for Effective Row Hammer Mitigation in sub-20nm DRAM
J. Li, L. Zhou*, S. Ye, Z. Qiao, and Z. Ji*, "Understanding the Competitive Interaction in leakage mechanisms for Effective Row Hammer Mitigation in sub-20nm DRAM," IEEE Electron Device Lett., vol. 45, no. 1, pp. 40-43, Nov. 2023.
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2023
Toward Reliability- and Variability-Aware Design-Technology Co-Optimization in Advanced Nodes: Defect Characterization, Industry-Friendly Modeling, and ML-Assisted Prediction
Z. Ji*, Y. Xue, P. Ren, J. Ye, Y. Li, Y. Wu, D. Wang, S. Wang, J. Wu, Z. Wang, Y. Wen, S. Xia, L. Zhang, J. Zhang, J. Liu, J. Luo, H. Deng, R. Wang, L. Yang, and R. Huang, "Toward Reliability- and Variability-Aware Design-Technology Co-Optimization in Advanced Nodes: Defect Characterization, Industry-Friendly Modeling, and ML-Assisted Prediction," IEEE Trans. Electron Devices,vol. 71, no. 1, pp. 138-150, Nov. 2023.
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2023
Oxygen Vacancy Modulation with TiO2 Stack Interface Engineering for Ferroelectric Hf0.5Zr0.502 Thin Films
X. Wang, M. Wu, B. Cui, Y. Li, Y. Wu, Y. Wen, J. Liu, X. Li, S. Ye, P. Ren, Z. Ji*, H. Lu*, David Wei Zhang, R. Wang*, and R. Huang, "Oxygen Vacancy Modulation with TiO2 Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O2 Thin Films,"IEEE Electron Device Lett., vol. 45, no. 1, pp. 100-103, Nov. 2023.
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2023
A Pragmatic Model to Predict Future Device Aging
J. Brown, K. H. Tok, R. Gao, Z. Ji, W. Zhang, J. S Marsland, T. Chiarella, J. Franco, B. Kaczer, D. Linten, and J. F. Zhang, "A Pragmatic Model to Predict Future Device Aging," IEEE Access, vol. 11, pp. 127725-127736, Nov. 2023.
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2023
Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps
K. H. Tok, J. F. Zhang*, J. Brown, Z. Ji and W. Zhang, "Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps," in 2023 IEEE 15th International Conference on ASIC (ASICON), Nanjing, China, 2023, pp. 1-4.
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2023
A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology
Y. Li, Y. Xue, Z. Sun, C. Shen, P. Ren, Z. Ji, L. Zhang*, R. Wang*, and R. Huang, "A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology," IEEE Trans. Electron Devices, vol. 71, no. 1, pp. 206-212, Oct. 2023.
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